Effects of Mg doping on optical and electrical properties of GaNAs multiple quantum wells

We have evaluated the effects of Mg doping on the optical and the electrical property of GaNAs/GaAs multiple quantum wells (MQWs) with high N composition (11∼17%) grown by radio-frequency molecular beam epitaxy (RF-MBE). The results of Van der Pauw measurements revealed strong n-type conduction by Mg doping. The blue-shifts and enhanced intensities in photoluminescence by Mg doping suggest the type-II band structure of GaNAs/GaAs MQWs and carrier generation by interstitial Mg atoms (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)