New Architectures for High Resolution Patterning

Abstract: The ability of the semiconductor industry to reduce device dimensions below 45 nm is hindered by limitations in both resist material and processing technique. High resolution and sensitivity along with low line edge roughness are key requirements of next generation resist materials. In order to meet the future demands of the semiconductor industry, new resist design strategies are being considered. In the past few years, we have focused on developing small molecule resists capable of high resolution patterning. Despite their small size, these molecules known as molecular glass can be designed to demonstr ate high glass transition temperatures (Tgs) comparable to polymeric resists. Several ring and branched architectures with high Tgs that have attained feature resolution as small as 30nm through Extreme Ultraviolet (EUV) exposure will be discussed. In addition to potential performance advantages, the small size of these resist molecules also allow solvent free processing techniques to be utilized. Our efforts on physical vapor deposition and supercritical CO