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Optimization of two‐dimensional electron gas characteristics of AlGaN/GaN high electron mobility transistors
Optimization of two‐dimensional electron gas characteristics of AlGaN/GaN high electron mobility transistors
2019
Abdelmalek Douara
Bouaza Djellouli
Hamza Abid
Abdelaziz Rabehi
Abderrezzaq Ziane
Mohammed Mostefaoui
Ahmed Ben Toumi
Naas Dif
Keywords:
Optoelectronics
Electron mobility
Electronic engineering
Transistor
Mathematics
High-electron-mobility transistor
high electron
algan gan
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