Enhancement of optical properties of boron-doped SiC thin film: a SiC QD effect

Silicon carbide quantum dots (SiC-QD) embedded inside the SiC thin film deposited on silicon (111) wafer is directly synthesized by modified chemical vapour deposition technique using boron-doped liquid polycarbosilane as a precursor. Subsequent microscopic characterization of the thin film exhibits the presence of QD, which is theoretically corroborated from the exciton Bohr radius. The film shows interesting visible and near-infra-red photoluminescence at room temperature with enhanced lifetime. In addition to the lifetime, the quantum efficiency in the visible emission was also enhanced substantially than what was reported previously.