Amorphous silicon nitride film and a manufacturing method thereof

A amorphous silicon nitride film formed on the film-forming target by using an amorphous silicon nitride film surface-wave plasma CVD apparatus according to the present invention, the amorphous silicon nitride film, a surface wave plasma CVD apparatus distance dielectric window and said film-forming target is at least 175mm, and the temperature of the film-forming target is deposited at 200 ° C. or less, in Rutherford backscattering (RBS) method and a Rutherford forward scattering (HFS) method measured film hydrogen concentration in the amorphous silicon nitride film is not more than 25 atm%.