Epitaxial structure of iii-group nitride and growth method therefor

Disclosed are an epitaxial structure of a III-group nitride and a growth method therefor. The epitaxial structure of the III-group nitride at least comprises: a Si substrate and a III-group nitride layer located on the Si substrate. Al atoms and in-situ generated Si x N y exist in parallel at an interface of the Si substrate and the III-group nitride, the Al atoms have the effects of soaking the Si substrate and connecting the III-group nitride layer, and the Si x N y is used for releasing mismatched stress generated by heteroepitaxy.