Performance evaluation of InGaAs, Si, and Ge nFinFETs based on coupled 3D drift-diffusion/multisubband boltzmann transport equations solver

This paper presents a simulation study of InGaAs, Si, and Ge nFinFETs by solving the coupled drift-diffusion (DD) and the multisubband Boltzmann transport equation (MSBTE) in 3D domains. The effects of the quasi-ballistic transport, source/drain contact resistances, and band-to-band tunneling (BTBT) on the device performance are studied.