A study on the SiC single crystal growth conditions by the resistance heating method

International Design Convergence Graduate School, Hanseo University, Seosan 31962, Korea(Received April 6, 2016)(Revised April 11, 2016)(Accepted Arpil 13, 2016)Abstract 6H-SiC single crystals were grown by using a resistance heating system. It was recognized that the growthbehavior was different according to the different growth temperatures. It was revealed that the temperatures at the sourcefeeding and at the crystal growth position had to be controlled independently. In this report, the effect of growthtemperature on the SiC crystal growth was discussed.Key wordsSiC, Resistance heating, Single crystal, Growth behavior, Growth condition