Monolithic integration of GaAs/AlGaAs LED and Si driver circuit

A GaAs/AlGaAs LED has been monolithically integrated with a Si driver circuit composed of ten MOSFETs. The LED replaces the output pad of a 2- mu m design rule, standard Si output buffer circuit, so that the overall area remains the same. By applying a stream of voltage pulses to the input of the driver circuit, the LED output has been modulated at rates exceeding 100 MHz. >