Processing method for nano-pole forest

The invention relates to a method for processing a nano column forest, which comprises the following steps: 1) preparing and cleaning a selected substrate; 2) spirally coating photoresist on the surface of the substrate, performing pre-baking, exposure and development on the photoresist in turn, and finally forming a photoresist graph; 3) performing oxygen plasma dry etching on the photoresist graph, and forming a layer of graphic nano punctiform structure on the substrate; 4) using the nano punctiform structure as a mask to perform anisotropic etching on the substrate, and forming an initial nano column; 5) forming a deposit film on the surface of the initial nano column; 6) forming a side wall on the circumference of the initial nano column through an anisotropic etching film; 7) taking the initial nano column which coats the side wall as the mask to perform the anisotropic etching on the substrate, and forming a nano column; and 8) removing side wall residue on the surface of the nano column, and obtaining a graphic nano column forest structure. The graphic nano column forest manufactured by the method can be widely applied to novel energy resource devices, biomedicine detectors, micro-fluidic devices, electronic devices and nano stamping.