Method for manufacturing a polycrystalline silicon block material, method for manufacturing a polycrystalline silicon wafer, and polycrystalline silicon block material

Disclosed are a method for manufacturing a polycrystalline silicon block material, a method for manufacturing a polycrystalline silicon wafer, and a polycrystalline silicon block material, wherein heat treatment can be performed appropriately, allowing the production of high-quality polycrystalline silicon wafers with longer lifetimes. The disclosed method for manufacturing a polycrystalline silicon block material, which is used as a raw material for solar cell substrates, is characterized by the provision of: a casting step (S1) in which a silicon melt is solidified, forming a polycrystalline silicon ingot; a cutting step (S2) in which the obtained polycrystalline silicon ingot is cut into blocks shaped like polygonal prisms, the heights of which are between 100 and 500 mm and the polygonal bases of which have diagonal lengths between 150 and 400 mm; and a heat-treatment step (S3) in which the blocks are heat-treated at a temperature between 500 DEG C and 600 DEG C with a hold time of 15 to 60 minutes and then cooled at a rate between 10 DEG C/min and 60 DEG C/min.