Terahertz Radiation FromHeavy-Ion Irradiated Ino.53Gao.47As Photoconductive Antenna At1.55 ptm

We measured theterahertz (THz) emission fromheavy-ion irradiated InO.53GaO.47As photoconductive (PC) antennas excited at1550nm.TheInO53GaO.47As layer irradiated at1012 cm-2 showsacarrier lifetime shorter than200fs, asteady-state mobility of490cm2V-1s-1, andadark resistivity of3.1Qcm. Thespectrum oftheelectric field radiated fromtheheavy-ion irradiated 1nO.53GaOA7As antenna extends beyond 2 THz. Comparative measurements performed on1n0.53GaO.47As PC antennas irradiated at1011 cm2and1012 cm2demonstrate the impact ofthedefect center scattering onthephoto-excited carrier mobility.