Cat-CVD passivation realizing extremely low surface recombination velocity < 0.2 cm/s in solar cell structure

We develop a new chemical cleaning method for crystalline silicon (c-Si), which is perfectly suitable for surface passivation by Cat-CVD SiN x /a-Si stacked layers to satisfy the most essential factors for fabrication of high efficient c-Si solar cells. Cat-CVD passivation realizes extremely low surface recombination velocity (SRV) lower than 0.2 cm/s. A sufficient resistance to chemical process is also confirmed to make the fabrication of back-contact high efficient solar cells easier. In the present work, the superiority of Cat-CVD passivation is clearly verified and the feasibility of its industrial implementation is implied for production of higher efficient c-Si solar cells.