Effect of light and heavy ion irradiation on graphene device matrix: Optical and Transport Characteristics

Abstract The transport and optical properties of few-layer graphene subjected to light and heavy ion irradiation of preconceived design matrix i.e. graphene/Ni/SiO 2 /Si (1.36 nm/400 nm /500 nm/500 µm) have been investigated. Monte Carlo based Stopping and Range of Ions in Matter (SRIM) code simulations were first performed using proton (H + ) and nickel (Ni + ) as ion irradiating species and then subsequently realized for ion implantation engineering in accordance with the target depth analyzed. The effect of annealing temperature of the bare, H + and Ni + irradiated device matrix was analyzed for optical and transport properties. The in-situ thermal analysis was also carried out for the resistivity measurements. The charge transfer between transition metal adatoms and graphene has been confirmed by the transport parameters observed. The present approach shows the possibility to monitor the damages involved affecting the transport and optical mechanism due to Ni + and H + irradiation of the graphene device matrix.