Evaluation of analog performance of monolayer and bilayer two-dimensional transition metal dichalcogenide (TMD) MOSFETs

We investigate the analog performance of monolayer and bilayer two-dimensional transition metal dichalcogenide (TMD) MOSFETs. The device analog metrics including the transconductance (g m ), output resistance (R o ) and intrinsic gain (g m × R o ) for TMD device are investigated using 3D atomistic TCAD simulations. It is shown that bilayer TMD devices exhibit better analog performance compared with monolayer TMD devices. The impacts of different mobility ratios of bilayer TMD devices to monolayer TMD devices are examined.