A light emitting diode chip having a distributed Bragg reflector

According to one embodiment of the present invention, provided is a light emitting diode chip including a distributed Bragg reflector (DBR) disposed on one side of a light emitting structure to reflect light emitted from the light emitting structure. The DBR comprises first material layers having low reflective index and second material layers having high reflective index, which are alternately stacked, and further comprises, with respect to a central wavelength ( : 554 nm) of a visible area: a first area in which first material layers of a first group having an optical thickness greater than 0.25 + 10% and first material layers of a second group having an optical thickness less than 0.25 + 10% and greater than 0.25 - 10% are alternately arranged; a second area including first material layers of a third group having an optical thickness less than 0.25 - 10% and successively arranged; and a third area located between the first area and the second area, and including a first material layer having an optical thickness less than 0.25 - 10% and a first material layer having an optical thickness greater than 0.25. Accordingly, provided is a DBR in which ripple does not occur in a stop band even if an incident angle increases.