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Long-term stability of Gallium Nitride High Electron Mobility Transistors: a reliability physics approach
Long-term stability of Gallium Nitride High Electron Mobility Transistors: a reliability physics approach
2009
Zanoni
Meneghesso
Meneghini
Tazzoli
Ronchi
Stocco
Zanon
Chini
Verzellesi
Cetronio
Lanzieri
Peroni
Keywords:
Reliability (semiconductor)
Optoelectronics
Monolithic microwave integrated circuit
Transistor
Deep-level transient spectroscopy
Gallium nitride
Term (time)
High-electron-mobility transistor
Physics
Wide-bandgap semiconductor
Correction
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