Characterization of charging damage in high power implants using SPIDER wafers

A detailed investigation of charging induced damage due to high power implants was done using SEMATECH SPIDER wafers with sub-50 /spl Aring/ gate oxide thickness. The SPIDER wafers have an active area to gate antenna ratio of up to 1:90 K, which enables a high sensitivity for charging related damage, Threshold voltage (V/sub t/) and gate leakage current (I/sub g/) shifts for both n- and p-type devices have been examined as a response to plasma electron flood (PEF) conditions. Results from 180 keV As/sup +/ and P/sup +/ implants at 20 mA and 5/spl times/10/sup 15//cm/sup 2/ dose are presented. The impact of PEF settings on n-mos and p-mos devices is shown, and correlated to both in situ charge monitors and CHARM wafers. This work underscores the importance of characterizing PEF operation to obtain optimum charge control.