Tunable V-cavity Semiconductor Laser and Modules

We present the principle, design, packaging and measurement results of widely tunable V-cavity lasers. By using a novel half-wave coupler, single-mode lasing with high side- mode-suppression-ratio is achieved. Single-electrode controlled wide-band wavelength tuning with Vernier efiect is realized. The full-band tuning of 50 channels with 100GHz spacing is demonstrated by further employing temperature induced gain spectrum shift. The laser is pack- aged into a small-form-factor 9-pin TOSA, and the electronic driver has been developed for the wavelength tuning and direct modulation. The advantages of compactness, fabrication simplic- ity, and easy wavelength control ofier great potential for the tunable laser to be used in low-cost access and data center networks, as well as in portable devices for spectroscopic analysis.