Fluorine limited reliability of AlInAs/InGaAs high electron mobility transistors with molybdenum gates

A highly reliable AlInAs/InGaAs high electron mobility transistor with the projected lifetime of 10/sup 6/ hours at 125/spl deg/C is developed. The gate electrode sinking is eliminated by adopting molybdenum gate contact metal, and the carrier passivation is controlled by eliminating the extrinsic fluorine containing processes. The experimental results and theoretical calculation indicate the present reliability is limited by the intrinsic fluorine contamination from the air.