Reconstruction of dopant vertical position from Kelvin probe force microscope images

In novel nano-scale electronic devices the number and location of individual dopant atoms within a device determine its characteristics. Therefore, precise control over these parameters is required. In this paper we describe Kelvin Probe Force Microscope (KPFM) designed for dopant detection. We propose a method for reconstruction of dopant position by using comparison between KPFM images with surface potential simulation based on Thomas-Fermi approximation. This is the first step to allow 3D reconstruction of many-dopant arrangements from 2D KPFM images.