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Ultraviolet Photodetectors using Transparent Gate AlGaN/GaN-HEMT
Ultraviolet Photodetectors using Transparent Gate AlGaN/GaN-HEMT
2011
narita tomotaka
Wakejima Akio
Egawa Takashi
Keywords:
Optoelectronics
Photodetector
Ultraviolet
High-electron-mobility transistor
Materials science
algan gan
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