The reaction of SiH2 with no in the IR laser photochemistry of SiH4 - no mixtures

Abstract The effect of nitric oxide on the IR laser photochemistry of silane at 944.19 cm −1 has been studied in the pressure range 20 – 44 Torr and at ambient temperature. At nitric oxide concentration of less than 11% of the silane, there is a clear inhibition of disilane and trisilane formation because of reaction of silylene with the nitric oxide. A kinetic analysis of the retardation indicates that the rate constant for reaction of silylene with nitric oxide is comparable with that for reaction with silane. At nitric oxide concentrations in excess of 15% of silane, the reaction becomes explosively rapid, yielding as products only hydrogen and a brown powder.