APF hard mask distortion improvement for high aspect ratio patterning

The goal of this research is to improve bending issue and etch durability of amorphous carbon hard mask film (APF). The design of experiments (DoE) employed variable conditions of the spacing, RF power, precursors flow (C 3 H 6 or C 2 H 2 ) and temperature. High Young's modulus and high sp 3 /sp 2 bonding ratio can increase the etching resistance, and strengthen the high aspect ratio patterning structures.