Inverter-based low-noise amplifier topologies for ultra-wideband applications

In this paper two ultra-wideband (UWB) low noise amplifier (LNA) configurations in UMC 0.18μm CMOS technology are presented. Both amplifiers are based on a shunt-feedback inverter-configuration with inductive peaking. In first LNA topology inductor is placed at the input node of the inverter cell. In the frequency range from 3.1 GHz - 10.6 GHz, this amplifier achieves power gain (S 21 ) of 12.23 dB, noise figure of 5.62 dB and input/output return loss of -8 dB/-11 dB, while consuming 9.61 mA from 1.8 V supply. In second LNA peaking inductor is applied at the gate of NMOS transistor in inverter stage. With this technique the -3 dB roll-off frequency is increased from 9 GHz, obtained with previous technique, to 11.11 GHz, without additional power consumption. Achieved power gain from 3.1 GHz - 10.6 GHz is 12.64 dB, noise figure is 4.04 dB and input/output return loss is -7 dB/-10 dB. This amplifier consumes 9.48 mA from the 1.8 V supply.