Photoluminescence in doped and annealed GeSe2 glass

Abstract Photodoping of GeSe 2 glass with Ag, Zn, In and Sn shifted the centre of the photoluminescence (PL) band towards lower energies and gave rise to a decrease in its half width, but no new band appeared. The excitation spectrum at 77 K and the temperature dependence of the PL intensity of Ag-doped samples were measured in the temperature range (77–280) K. An activation energy of (253 ± 10) meV for non radiative transitions was foundat T > 210 K which is smaller than that measured in undoped GeSe 2 glass. Thermal annealing shifted the peak of the PL band towards higher energies but had no effect on its half width.