The effect of elastic disorder on single electron transport through a buckled nanotube

We study transport properties of a single electron transistor based on elastic nanotube in the Coulomb blockade regime. We assume that the external compressive force is applied to the nanotube and focus on the vicinity of the Euler buckling instability. We demonstrate that in this regime the current-voltage characteristics of the transistor is extremely sensitive to random elastic disorder. In particular, the threshold value of a bias voltage beyond which the transport current flows is parametrically enhanced by random curvature and an additional plateau in dependence of the average current on a bias voltage appears.