Electrical properties and optical absorption in InN:In structures

Electrophysical and optical absorption measurements have been performed for conventional InN epilayers and InN:In composite structures grown by plasma-assisted molecular beam epitaxy. It is shown that intentional periodical introduction of In metallic inclusions into InN layers results in formation of inhomogeneous arrays of clusters. Their presence modifies the shape of absorption spectra. At the same time, significant amount of indium (up to 1/3 of a thickness) in these structures does not influence noticeably the carrier concentration and mobility. These parameters fall in the range of published data for the conventional InN layers. These finding can indicate that formation of In clusters in InN is a more frequent event than it is currently accepted. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)