Luminescence and threshold characteristics of optically excited InGaAsP/InP double heterostructures (0. 94

The luminescence and threshold characteristics of InGaAsP/InP heterostructures with a wide range of compositions of the active region were investigated for the first time under optical excitation conditions. Weakening of the Auger recombination process on going over from structures emitting at lambda = 1.51 ..mu.. to ''wide-gap'' structures emitting at lambda = 1.1 ..mu.. increased the value of the parameter T/sub 02/ representing the temperature dependence of the lasing threshold at T>250 K: the parameter T/sub 02/ increased from 60 K to 90--95 K. For the same reason, a reduction in the wavelength lambda in the range 1.1