Simulation of Epitaxial Growth Interface on Convex Substrate Using Phase Field Crystal Method

【Objective】Phase-field crystal model is employed to simulate the process of growth of epitaxial layer on plane and convex substrates.【Methods】Under the condition of the large lattice mismatch(e=0.10)and the small inclination,the influence of the curvature and the angle of the substrate on the systematic free energy and the total atomic number of the epitaxial layer were analyzed.【Results】The results show that when the curvature of the substrate is plane,the free energy increase with the increase of the substrate angle,and so is the total atomic number of the epitaxial layer;when the curvature of the substrate is convex,the free energy decrease with the increase of substrate angle,and so is the total atomic number of the epitaxial layer.【Conclusion】We can trimming the substrate angle to alter the system's free energy and the total atomic number of the epitaxial layer.