Old Web
English
Sign In
Acemap
>
Paper
>
High-rate growth of the OVPE-GaN crystal by the suppression of polycrystal formation at a high temperature, 1300 o C
High-rate growth of the OVPE-GaN crystal by the suppression of polycrystal formation at a high temperature, 1300 o C
2021
Ayumu Shimizu
Shigeyoshi Usami
Masahiro Kamiyama
Masayuki Imanishi
Mihoko Maruyama
Masashi Yoshimura
Masahiko Hata
Masashi Isemura
Yusuke Mori
Keywords:
Gallium nitride
Materials science
Semiconductor
high rate
Analytical chemistry
Crystal
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]