Silicon-based light modulator

The utility model provides a silicon-based light modulator which at least comprises a ridge-shaped waveguide, wherein the ridge-shaped waveguide comprises a plate part and a convex strip which is positioned in the middle of the plate part and is higher than the plate part; the ridge-shaped waveguide comprises first light doped zones and second light doped zones; the first light doped zones comprise first longitudinal light doped zones which are formed in the middle of the convex strip and extend in the extension direction of the convex strip, and at least one first transverse light doped zone which is formed on the convex strip and the plate part and intersectant with the convex strip; the second light doped zones are opposite to the first light doped zones in doping type and are formed in the convex strip on the outer sides of the first light doped zones and in the plate part, so that transverse and longitudinal PN junctions are formed by the second light doped zones and the first light doped zones. According to the silicon-based light modulator provided by the technical scheme of the utility model, a plurality of first transverse light doped zones and second light doped zones as well as first longitudinal light doped zones and second light doped zones are adopted to form the PN junctions, the area of an use-up zone in a mode field is increased, and thus the modulation efficiency of the silicon-based light modulator is improved.