Silicon-on-insulator silicon germanium heterojunction bipolar transistor (SOI SiGe HBT) planar integrated device and preparation method thereof

The invention discloses a silicon-on-insulator silicon germanium heterojunction bipolar transistor (SOI SiGe HBT0 planar integrated device and a preparation method thereof. The preparation method comprises following steps of continuously growing N-channel silicon (N-Si), P-channel silicon germanium (P-SiGe) and an N-channel silicon (N-Si) layer to deposit a dielectric layer to prepare shallow-trench isolation, photo-etching a collector region shallow-trench isolation area, preparing a collector region shallow-trench isolation, etching and depositing a dielectric layer, photo-etching a base-region shallow-trench isolation area, preparing a base-region shallow-trench isolation, photo-etching a collector region and injecting phosphorous ions to form a collector electrode contact region, photo-etching a base region and injecting boron ions to form a base electrode contact area, finally forming a SiGe HBT device, finally photo-etching a transmitting region lead hole, a base region lead holeand a collector region lead hole, metalizing, photo-etching leads, and forming an HBT integrated circuit with the thickness of the base region of 20 to 60nm. The technical method provided by the invention is compatible with the processing technique of the traditional CMOS integrated circuit, so that under the situation that the fund and the equipment investment are small, the SOI-based bipolar complementary metal-oxide semiconductor (BiCMOS) device and an integrated circuit are prepared, and the performance of the traditional analog and digital mixed integrated circuit is greatly improved.