High-Power, High-Efficiency Monolithic Edge-Emitting GaAs-Based Lasers with Narrow Spectral Widths

Abstract GaAs-based edge-emitting diode lasers in the 600–1100 nm range efficiently deliver high-optical powers with long lifetimes and are in wide commercial use. However, if no special measures are taken, the spectral width is too large (4–5 nm, with 95% power content) for use in many applications. In recent years, technological and design advances have enabled monolithic devices to deliver > 1 W optical output power with spectral widths of