Photoelectron attenuation lengths and thermal broadening in GaAs(110)

Abstract High resolution photoemission spectra from cleaved GaAs(110) have been used to determine the attenuation length as a function of photoelectron kinetic energy in the solid. The data are well described by an empirical functional form with a minimum escape depth of 4.77 A at an energy of 32 eV. These results are compared with those from studies of InSb(110) and GaP(110). In addition, constant resolution photoemission has been used to evaluate thermal broadening of core-level line shapes from 50–300 K over a range of photon energies from 40–190 eV. This effect is relevant in high resolution studies of temperature dependent chemistry on metal-semiconductor interfaces and heterojunctions.