Asymmetrical bridgman growth technique for larger and better quality mercury cadmium telluride crystals

Abstract An innovative and simple technique of modified vertical Bridgman growth is reported for making the solid-liquid interface planar. Instead of the usual radial symmetrical temperature conditions, a linear temperature gradient is created along the diameter of the cooling ingot during the growth. Single crystals of Hg 1- x Cd x Te with fairly uniform composition across the cross-section could be grown. This method has advantages over the other contemporary methods being adopted by various workers for Hg 1- x Cd x Te crystals.