Numerical study and comparisons with experimental data for transient behaviour of phase boundaries during industrial FZ process for silicon crystal growth

Abstract In our numerical transient model developed previously for the industrial FZ crystal growth process with the needle-eye technique, the meshing algorithms are essentially improved and a significant amount of numerical studies are carried out for model verification. Transient modelling for the experimental growth process with step-like time dependences of inductor current and feed rod velocity has shown that time dependencies of the crystal radius and zone height calculated numerically agree with the data from praxis. The fully transient simulation for growth process of crystal starting cone has shown that the model is capable of performing the simulation even if the crystal diameter changes very significantly. These results also testified that the new FEM and BEM mesh update algorithms described in the present paper are important to perform the correct and fast simulation of transient crystal growth processes.