A method for producing a photomask and extreme ultraviolet (EUV)

Example embodiments of the present invention provides a method for EUV EUV photomask and the photomask is formed. The method comprising: providing a substrate, a reflective layer, a cover layer, a hard mask layer, and forming an opening therein. Then, the opening in the top surface and the hard mask layer filling the absorber layer. Providing a planarization process to remove the top surface side of the absorbent layer located in the hard mask layer and the absorbent body is formed in the opening, wherein the base width greater than the top absorbent body.