A low-temperature limit for growth of ZnO nanowires by using of laser ablation processes

The contribution deals with growth of ZnO nanowires on metal catalysts by using of pulsed laser deposition and with the influence of growth temperature. The process of nanowires preparation comprised two technological steps—both were based on pulsed laser ablation processes: (1) production of metal nanoparticles by laser ablation in liquids and (2) pulsed laser deposition of ZnO nanowires by ablation of ZnO target on substrate with metal nanoparticles. Nanoparticles from various metals (Au, Ag, Ni, Cu, Al, Mg, Zn, Sn and BiSn alloy) were prepared by pulsed laser ablation at 1064 nm in deionised water. Colloids contained metal nanoparticles were applied on Si (100) substrates, and after drying, nanoparticles served as catalysts of VLS crystallisation. Temperatures in interval 600—200 °C were experimentally compared for the nanowires growth with applied ablation laser working at 248 nm. The lowest achieved temperature value for growth of ZnO nanowires was 425–450 °C. However, among applied metals Cu and Al nanoparticles only successfully catalysed ZnO nanowires at this temperature. Properties of prepared samples were investigated by scanning electron microscopy and photoluminescence. Experimental results revealed that along with the growth temperature, selection of proper metal catalyst is also important factor for nanowires crystallisation.