100-nm OPC mask patterning using raster-scan 50-kV pattern generation technology

ABSTRACT The complexity of photomasks is rapidly increasing as semiconductor devices are scaled down and optical proximitycorrection (OPC) becomes commonplace. Raster scan architectures are well suited to the challenge of maintaining maskthroughput despite these trends. Electron-beam techniques have the resolution to support OPC requirements into theforeseeable future. The MEBES ® eXara mask pattern generator combines the resolution of a finely focused electronprobe with the productivity and accuracy of Raster Graybeam patterning. Features below 100nm can be created, andOPC designs are produced with consistent fidelity. Write time is independent of resist sensitivity, allowing high-doseprocesses to be extended, and relaxing sensitivity constraints on advanced chemically amplified resists. The system isdesigned for the production of 100nm photomasks, and w ill support the development of 70nm masks.Keywords: MEBES, electron beam, lithography, photomask, graybeam, CAR, OPC 1. INTRODUCTION