Regioselective method can grow the equilibrium nanowires, nano device that includes nano-wires, and it is formed by him

The invention positions selectively growing method of the flat nanowires, it relates to nanowires and nanoscale devices comprising the same which is formed by, more specifically, a predetermined length and diameter by selecting the desired location for device produced by the substrate and the horizontal direction by growing a nanowire with, it is positioned selectively to improve the integration degree of the device how the growth of the flat nanowires, the present invention relates to nanowires and nanoscale devices comprising the same are formed thereby. A hollow channel, a silicone core, the catalyst metal layer, anodising, the aluminum oxide film, a transistor, a source electrode, a drain electrode, a gate connection line, the light-emitting layer