Low dark current SWIR photodiode with InGaAs/GaAsSb Type II quantum wells grown on InP substrate

For sensing short wavelength infrared (SWIR) region (1.0–2.5 µm), photodiodes with In 0.53 Ga 0.47 As/GaAs 0.5 Sb 0.5 type II quantum well structure grown on InP substrate by solid source molecular beam epitaxy (MBE), were successfully fabricated. Low dark current was obtained by improving GaAsSb crystalline quality.