Atomic layer deposited strontium niobate thin films as new high-k dielectrics

Abstract Strontium niobate thin films have potential for next-generation high-k dielectric applications. In this work, we investigated the fabrication of SrxNb1-xOy thin films by atomic layer deposition for the first time and examined their physical and electrical characteristics. The composition of the SrxNb1-xOy thin film could be effectively controlled by introducing a super-cycle, and it was confirmed that the crystallinity after annealing varied depending on the composition. The Sr-rich film was crystalline after annealing and showed a high dielectric constant of approximately 75. In addition, it was observed that the Nb-rich film had a relatively large dielectric constant of approximately 65 even though it was amorphous, confirming that it could be applied as a next-generation high-k material. This research is the first step toward a new high-k dielectric candidate, which we believe can be applied to next-generation semiconductor devices through further research to improve the characteristics.