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GaN-based transistors using buffer-free heterostructures for next generation RF devices
GaN-based transistors using buffer-free heterostructures for next generation RF devices
2018
R. Pecheux
Riad Kabouche
Malek Zegaoui
Jr-Tai Chen
Olof Kordina
Farid Medjdoub
Keywords:
Heterojunction
Materials science
Transistor
Optoelectronics
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