Vapor-Liquid-Solid Synthesis of Ge Nanowire on H-terminated Si Substrate

The synthesis of Ge nanowires on H‐terminated Si substrate is discussed in detail. The surface condition, growth temperature and substrate orientation have the important influences on the growth of Ge nanowires. Without HF treatment, it is difficult to grow high density Ge nanowires. After removal of SiO2 overlayer caused by silicon migration and nature oxidization, high‐density Ge nanowires can be grown.