Vapour growth and doping of ZnSe single crystals

Abstract The results of seeded vapour-phase free growth of ZnSe single crystals in both the 〈1 1 1〉 and 〈1 0 0〉 directions are presented and discussed. Optimum growth conditions were found to be essentially different for these two directions. The doping by In and Al from both vapour phase during the growth process at T =1180–1240°C and liquid phase by means of annealing in liquid Zn with In or Al additions at T =900–950°C was performed. To characterize grown crystals, selective chemical etching, X-ray diffraction rocking curve, cathodoluminescence study, atomic-emission analysis, specific resistance and Hall effect measurements were carried out.