The influence of 175 MeV Nickel ion irradiation on the electrical characteristics of power transistors (HF13)

The dc electrical characteristics of NPN RF power transistors were studied systematically before and after 175 MeV Ni 13+ ion and Co-60 gamma irradiation in the dose range from 100 krad to 100 Mrad. The transistor parameters such as excess base current (ΔI B = I Bpost- I Bpre ), dc current gain (h FE ), and collector-saturation current (I CSat ) were studied. The base current ( IB ) was found to increase significantly after irradiation and this in turn decreases the h FE of the transistors. Further, the output characteristics of the irradiated devices exhibit the decrease in the collector current at the saturation region (I CSat ) with increase of radiation dose.