A method for producing fin structures of a semiconductor device in a substrate

a method for producing fin structures, using dsa lithographic patterning, in an area of ​​a semiconductor substrate, comprising: - providing a semiconductor substrate covered with a shallow trench isolation (sti) layer stack on a side thereof; - defining a fin area on that side of the substrate, wherein said fin structures will be produced, by performing a lithographic patterning step other than dsa; and - thereafter, producing said fin structures in the semiconductor substrate within said fin area according to a predetermined pattern using fin dsa lithographic patterning; and associated semiconductor structures.