Nanoscale silicon prepared on different substrates using electron-beam evaporation and their field-emission property

Abstract Silicon nanorods (about 10–35 nm height) on silicon and porous silicon substrates were synthesized using ultra-high vacuum electron-beam evaporation in the present of a Fe catalyst. Atomic force microscopy (AFM) is used to estimate the dimension and check the morphology of the silicon nanoclusters. The electron field emission is used to reveals the property of silicon nanorods grown on different substrates.