The current status of plasma grown silicon dioxide layers on SiGe epitaxial layers for surface passivation and possible gate oxide application

Early work on plasma grown oxides was encouraging in that it demonstrated that good breakdown strength was achievable, although interface states were seen to dominate the electrical behaviour of the SiO2/SiGe interface. More recently, further work has produced a number of very promising results for these grown oxides. These results are reviewed and the significance for SiGe based bipolar and MOS technologies discussed. (5 pages)